Infulence of Source/Drain Contact Structure on the Performance of InGaZnO Thin-Film Transistors with Gate Dielectric

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === Indium gallium zinc oxide (IGZO) thin-film-transistors (TFTs) with excellent film uniformity, high carrier mobility and high transparency have shown high potential for applications of active matrix arrays for future display. However, in the operation of n-t...

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Bibliographic Details
Main Authors: Jun-WeiDu, 杜浚瑋
Other Authors: Shui-Jinn Wang
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/11417823107914105865