Enhanced Performances of GaN-based MOS-HEMTs by Surface Passivation and Post Oxide Annealing
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === The research is mainly investigated on the improvement of hydrogen peroxide (H2O2) Metal-Oxide-Semiconductor high electron mobility transistor by using post oxide annealing (POA). Hydrogen peroxide has a strong oxidation capability, it can oxidize the surfa...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43386885006452789517 |