Nanoepitaxy of III–V epi–layer onto nanopatterned and nanoscale stripe patterned Si substrate
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === GaAs and InAs are grown on geometric nanopatterned and nanoscale stripe patterned Si substrates with SiO2 as a mask by metal–organic vapor–phase epitaxy. Theoretical models suggest the possibility of strain relief and dislocation reduction via a decrease i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39654694959280214262 |