Preparation, Characterization and Diffusion Barrier Application in Cu Metallization of Reactively Sputtered Tantalum Zirconium Nitride Thin Films
博士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 101 === As semiconductor device technology approached the deep sub-micron process requirements, copper has replaced aluminum in the interconnect metallization due to its excellent electrical conductivity and superior electromigration resistance as compared to Al....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62270239986943490235 |