Anodization Preparation of Ta3N5 Thin Films as Photoelectrodes for Water Splitting
碩士 === 國立成功大學 === 化學工程學系碩博士班 === 101 === In the present work, a n-type semiconductor tantalum nitride(Ta3N5) film is fabricated by anodization. Ta3N5 with a band gap of 2.0 eV, which can absorb visible light and is suitable to be a good photoanode. From XRD and SEM analysis, which can know that Ta3N...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76072095263052302208 |