TSV induced stress analysis using 3D Raman spectroscopy technique

• Main Authors: Bo-Yi Huang, 黃柏益
• Other Authors: Mingchih Shih
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/44547444761961302947

碩士 === 國立中興大學 === 奈米科學研究所 === 101 === Because of the mainstream of electronic products toward portable, pushing the package of integrated circuit become lighter and smaller, and TSV technology emerges as a result, which can save space and cost by 3D stacking separate chips in a single package. But 3DIC process exists reliable and stable problems. For examble,the residual stresses of different excavate technologies may yield defectes on the following processes between die to die, and then it could probably affects the quality yield. So the analysis of residual stress is an important issue for 3DIC technology. Adapting the non-extrusive character of micro Raman spectroscopy technique, we applied the technology of confocal Raman in exploring the three dimensional stress distribution induced by chemical etching deep well in silicon crystal. Through the laser confocal technique, we had successfully demonstrated the capability of extracting the three dimensional stress images. In order to obtain higher resolution in resolving the stress distribution, we used mathematic function fitting to determine the peak shift. With this method, we are able to increase at least one order of magnitude in the wavelength shift resolution. Through our developed software, we are able to analyze the stress information. This result could promote the ability in studying stress information during the three dimension stacked IC processes. In order to obtain higher resolution in resolving the stress distribution, we use mathematic function fitting to determine the peak shift. With this method, we are able to increase at least one order of magnitude in the wavelength shift resolution. We compared different type of holes, different hole sizes and etch depths and hope to find out the trend of residual stress. The results showed that the maximum value found is within few tens to two hundred of MPa. Most of the observed stressed regions are confined to the edge vicinity of the holes, and the stress will not spread over 1μm, but there are no obvious trends from the geometrical features due to the etching process. Furthermore,we found some phenomena don''t caused by our sample,and it did affect the analysis of our data. From our experiment,we know that the stability of temperature control by the air conditioner will be an important issue in high stress resolution of Raman spectroscopy.