TSV induced stress analysis using 3D Raman spectroscopy technique

碩士 === 國立中興大學 === 奈米科學研究所 === 101 === Because of the mainstream of electronic products toward portable, pushing the package of integrated circuit become lighter and smaller, and TSV technology emerges as a result, which can save space and cost by 3D stacking separate chips in a single package. But...

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Bibliographic Details
Main Authors: Bo-Yi Huang, 黃柏益
Other Authors: Mingchih Shih
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/44547444761961302947