Fabrication and characterization of P-side up thin film AlGaInP LEDs with high thermal dissipation substrate

碩士 === 國立中興大學 === 精密工程學系所 === 101 === In this research, a new fabrication technique for AlGaInP LEDs application to solve the problems of low thermal dissipation and visible light absorption in GaAs substrate has been developed. At present, the epilayer structure of AlGaInP LED was usually transferr...

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Bibliographic Details
Main Authors: Chi-Feng Weng, 翁啟峰
Other Authors: Ray-Hua Homg
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/57187042480990575537