Current blocking effect of GaN nanoporous structures
碩士 === 國立中興大學 === 材料科學與工程學系所 === 101 === In this paper, an InGaN-based LED structure was treated by Focused Ion Beam (FIB) and formed nanoporous n-GaN structure by EC wet etching process in oxalic acid solution. Through the FIB, the beauty particular micro-pattern could be formed, and then utilizing...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/mr5f5x |