Electroless Deposition of Cu(Re) Alloy Film for Self Formation of Re Diffusion Barrier

碩士 === 國立中興大學 === 材料科學與工程學系所 === 101 === As the line width and spacing of intergrated circuits continually decrease, copper with low electrical resistivity and high electromigration resistance has been widely used as an interconnect material. To inhibit rapid copper diffusion into silicon devices,...

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Bibliographic Details
Main Authors: Li-Ping Liang, 梁莉苹
Other Authors: Shou-Yi Chang
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/51178623093623374968