Diffusion Resistant Ability and Enhancement Mechanism of Multi-component Alloy and Nitride Films

• Main Authors: Chen-En Li, 李承恩
• Other Authors: Shou-Yi Chang
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/53267362682691857513

碩士 === 國立中興大學 === 材料科學與工程學系所 === 101 === With the rapid development of copper metallization technology and the decrease in the line spacing of integrated circuits, there is a need of thin but thermally stable diffusion barrier layer to inhibit the diffusion of copper atoms. Recent studies indicate that multi-component high-entropy alloys and their nitrides with excellent thermal stability are promising for the use as diffusion barriers, but however the mechanism for an enhanced diffusion resistance has not been clarified. Thus, in this study, unitary to senary alloy (1A-6A) and their nitride (1N-6N) films were deposited by radio-frequency magnetron sputtering, and the diffusion-resistant ability was examined. Experimental results showed that, with increasing number of incorporated metallic elements, the endurance temperature of the alloy and nitride films increased from 500 to 800°C, implying high diffusion resistance of multi-component alloys and nitrides. The activation energy for copper diffusion through the barrier layers was calculated and found to increase with the number of incorporated metallic elements. The large lattice distortions caused by different atom sizes, the increase in cohesive energy, and the high packing density of atoms are the dominant factors for the high diffusion-resistant ability of multi-component high-entropy alloys and nitrides.