Cu Electroplating for Through Silicon Vias Filling Using a Dimensionally Stable Anode

• Main Authors: Wan-Yun Hsiung, 熊婉雲
• Other Authors: Wei-Ping Dow
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/84992471750237289351

碩士 === 國立中興大學 === 化學工程學系所 === 101 === Nowadays, the contact distance between electronic devices has become much shorter with the trend of electronic product miniaturization. Copper electroplating is used to make interconnects in integrated circuit (IC) manufacturing. To promote transmission speed of signal, through silicon via (TSV), acting as short and direct interconnection between up and down chips, is superfilled by copper electroplating using some kinds of additives. Soluble anode is usually applied to copper electroplating in a traditional plating bath, but soluble anode has some disadvantages, such as area change with time, which causes the distribution of current non-uniform. This may affect product reliability and stability of the plating bath. Because of these problems, dimensionally stable anode (DSA) is used to avoid the disadvantage of soluble anodes. In addition, we use some kinds of additives to improve the structure and reliability of electrodeposited film. These organic additives were suppressor, accelerators, leveler and wetting agent. Traditional accelerator, such as Bis(3-Sulfopropyl) Disulfide (SPS), is not appropriate for DSA system because of easy breakdown, such that we must develop a novel accelerator, ACC, for DSA system. It has a longer lifetime for acceleration on copper deposition than SPS, and its acceleration performance is also better than SPS. ACC can exhibit excellent filling performance in the DSA plating system. But there is the structure defect in the filled copper and we have found ways to solve the structure defect of filled copper.