Buffer-Facilitated Epitaxial Growth of Zinc Gallate Film

碩士 === 明志科技大學 === 材料工程研究所 === 101 === The growth zinc gallate thin films using RF magnetron sputtering.0.3-μm-thick zinc gallate films were grown epitaxially form amorphous matrix by annealing if thin buffers of titanium nitride were sandwiched between zinc gallate and substrate. Nucleus and growth o...

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Bibliographic Details
Main Authors: Yu-Jeng,Lin, 林育徵
Other Authors: Yan-Ru,Lin
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/24385339692669516295