Buffer-Facilitated Epitaxial Growth of Zinc Gallate Film
碩士 === 明志科技大學 === 材料工程研究所 === 101 === The growth zinc gallate thin films using RF magnetron sputtering.0.3-μm-thick zinc gallate films were grown epitaxially form amorphous matrix by annealing if thin buffers of titanium nitride were sandwiched between zinc gallate and substrate. Nucleus and growth o...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24385339692669516295 |
| Summary: | 碩士 === 明志科技大學 === 材料工程研究所 === 101 === The growth zinc gallate thin films using RF magnetron sputtering.0.3-μm-thick zinc gallate films were grown epitaxially form amorphous matrix by annealing if thin buffers of titanium nitride were sandwiched between zinc gallate and substrate. Nucleus and growth of epitaxial crystal from amorphous after low temperature annealing were observed by high resolution transmission electron microscope. The process is similar to that crystal grows in liquid but occurs in solid which is much more difficult to rearrange atoms. The enhanced luminescence in epitaxial films presumably reflects lower defect densities due to growth on low energy surfaces. Photoluminescent measurements show the luminescent properties of the films depend strongly on the crystal orientation and the epitaxial quality. This work enhances our concept of heteroepitaxial growth and its potential applications.
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