Nanometer Processes in Strain Engineering Characteristics of FinFET Devices and Low Noise Amplifier Circuit Design
碩士 === 明新科技大學 === 電子工程研究所 === 101 === As the semiconductor devices shrink to down below nanometer-scale, the obvious benefits lie on the low-cost fabrication and ultra-high speed. Nevertheless, the serious requirements are the must. Unfortunately, the shrunk traditional CMOSFET devices no longer sat...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98590649290895145317 |