Analytical Calculation and Analysis of Conventional and MOS-HEMTs

• Main Authors: Jung Chin Chang, 張榮欽
• Other Authors: Jung Shng Huang
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/43737526303848360685

碩士 === 義守大學 === 電子工程學系 === 101 === In this thesis, the dc characteristics of conventional high electron mobility transistor (HEMT) and metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) are calculated by the analytical models. The two dimensional electron gas (2DEG) and Fermi level in equilibrium are solved by the one-dimensional Poisson’s equation coupled with the quantum mechanics. Secondly, the one dimensional Poisson’s equation is solved for the Schottky layer with boundary conditions, the energy band, electric field distribution and the two dimensional electron gas, are obtained. The dc I-V curves are calculated by using drift-diffusion mechanisms, the charge-control model and the two-region the model. The calculated results are compared with the measured results for both HEMT and MOSHEMT. The maximum error=10% for HEMT and maximum error=15% for MOSHEMT. These results show that the breakdown voltages of MOSHEMT are superior than that of HEMT.