Analytical Calculation and Analysis of Conventional and MOS-HEMTs
碩士 === 義守大學 === 電子工程學系 === 101 === In this thesis, the dc characteristics of conventional high electron mobility transistor (HEMT) and metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) are calculated by the analytical models. The two dimensional electron gas (2DEG) and Fermi leve...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43737526303848360685 |