Research of Silicon Carbide Schottky Diodes and MOS Capacitor
碩士 === 健行科技大學 === 電子工程所 === 101 === In this thesis, a good silicon oxide is grown on the Silicon Carbide(SiC) substrate bythelow-temperature,Liquid Phase Deposition(LPD)method. After adding Al catalytic layer and tuning the post annealing temperature(600~900℃), the LPD oxide film show behave as a go...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03346399727400642343 |