Optical properties of surfactant Sb incorporation to InGaP epilayer
碩士 === 中原大學 === 電子工程研究所 === 101 === In this study, we grow InGaP epilayer on Ge substrate by metal organic chemical vapor deposition (MOCVD) and investigate the effect of surfactant Sb incorporating into InGaP epilayer. First, the temperature dependence of PL (15K ~ 300K) has been done in sample CCC...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/5tb5d7 |