Study of low temperature annealed ohmic contact Ge/Pd/Au for n-type GaAs and its application to solar cell
碩士 === 中原大學 === 電子工程研究所 === 101 === Abstract In this dissertation, the feasibility of multi-layered metallurgical structure composed of Ge/Pd/Au used as the ohmic contact to n-type GaAs material is investigated by the transmission line model (TLM). In the experiments, the effects of rapid therma...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13789749503150584920 |