Study of Punch Through Mechanism in Single-sided Non-Overlapped Implantation nMOSFETs

碩士 === 中原大學 === 電子工程研究所 === 101 ===   Non-volatile memories play more and more important roles with the development of the portable microelectronic products. In this work, a novel one-time-programmable single-sided non-overlapped implantation (SNOI) anti-fuse cell is investigated.   The anti-fuse ce...

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Bibliographic Details
Main Authors: Er-Heng Yuan, 袁爾亨
Other Authors: Syang-Ywan Jeng
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/32g29t