The adhesion improvement of Cu films on the SiO2 substrate
碩士 === 正修科技大學 === 電機工程研究所 === 101 === This paper is designed to use different layers of intermediary materials pass into the gas-evaporation of Cu films on high-temperature annealing, the and observe their characteristics after annealing. Deposition of complete evaporation of Cu films unfolds anneal...
Main Authors: | Yi-Feng Lin, 林意豐 |
---|---|
Other Authors: | Chun-Chiek Huang |
Format: | Others |
Language: | zh-TW |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/61223017760915103990 |
Similar Items
-
Deposition of Cu thin film on SiO2/Si substrate by ionized metal plasma system
by: Wei-Ding Wu, et al.
Published: (2002) -
Studies of Hydrophobic SiO2 Anti-corrosion Film
by: Lin Yi Huang, et al.
Published: (2014) -
The study of structure and defect of the SiO2 film and Si-SiO2 interface on silicon substrate in optical measuring
by: Jen-Hwan Tsai, et al.
Published: (1998) -
Porous SiO2/Cu Electric Measurement
by: Tso-An Lin, et al.
Published: (2002) -
Evaluation of Re and Re(O) as Diffusion Barrier for Cu Metallization on Si/SiO2 Substrats
by: Jiun-Hung Shen, et al.
Published: (2001)