The adhesion improvement of Cu films on the SiO2 substrate

碩士 === 正修科技大學 === 電機工程研究所 === 101 === This paper is designed to use different layers of intermediary materials pass into the gas-evaporation of Cu films on high-temperature annealing, the and observe their characteristics after annealing. Deposition of complete evaporation of Cu films unfolds anneal...

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Bibliographic Details
Main Authors: Yi-Feng Lin, 林意豐
Other Authors: Chun-Chiek Huang
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/61223017760915103990