The adhesion improvement of Cu films on the SiO2 substrate

• Main Authors: Yi-Feng Lin, 林意豐
• Other Authors: Chun-Chiek Huang
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/61223017760915103990

碩士 === 正修科技大學 === 電機工程研究所 === 101 === This paper is designed to use different layers of intermediary materials pass into the gas-evaporation of Cu films on high-temperature annealing, the and observe their characteristics after annealing. Deposition of complete evaporation of Cu films unfolds annealing phenomena, the film-grain will grow over time and cause the copper property not stable in the Cu films. High temperature annealing process thus becomes absolutely necessary process steps, because it can effectively control steam annealing of Cu films plating, the resistivity of Cu films stability, enhancing the reliability of Cu films on adhesion. The purpose of this paper, we will respond to the intermediary layer of sediment in different materials (Al、Ti) deposition of Cu on membrane, using different gases of N2 (Ar), different temperature subjected to annealing treatments one hour, evaporation characteristics of Cu thin films deposition by observation. By results of experiments, we find that selecting appropriate material when the intermediary layer accesses the appropriate gas annealing treatment, Sedimentary deposition of Cu films on the intermediary layer has lower resistance values with better adhesion. Use Al when the intermediary layer of material after argon annealed Cu films can effectively improve the adhesion of Cu films on the substrate, using Ti as attached to materials, is the use of N2.