Multilevel Cell Operation of Gadolinium Oxide Resistive Random Access Memory Treated by Hydrogen Plasma Immersion Ion Implantation
碩士 === 長庚大學 === 電子工程學系 === 101 === Recently, many studies have been done in the Gd2O3 RRAM. Different top and bottom electrode material, as well as the post treatment process on the dielectric has been proposed for different switching mechanism. In this study, we attempt to improve the performance...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65788518285506645710 |