The Dependence of InGaN/GaN Multiple-quantum Barrier heterostructures on the Characteristics of light-emitting diodes
碩士 === 長庚大學 === 電子工程學系 === 101 === The dissertation is organized as follows.Unique correlations between the excitonic characteristics and heterinterface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures.The depend...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91175121138662755380 |