| Summary: | 碩士 === 國防大學理工學院 === 電子工程碩士班 === 101 === In this thesis, we mainly discuss the etching fabrication of infrared imaging devices, such as focal plane arrays (FPAs) which is one of the most promising infrared and a GaAs/AlGaAs based Quantum well infrared photodetector(QWIP) FPA. These devices are extendedly applied to defense, medicine, and industry. This is because the QWIP produced by the GaAs/AlGaAs have the better performances, such as uniform, detectivity, etc.
The contributions of this thesis are described as follows. Firstly, we optimize the etching parameters for the fabrication of a 320×256 pixel LWIR QWIP FPA. Secondly, we design the thinning process (i.e. substrate-removal process) to improve the infrared image quality.
We also compare the uniform between dry and wet etching methods on the substrate-removal process. For the dry etching method, the wafer has the worse uniform due to the damage to the underlying material caused by plasma, and not optimizing parameters. On the contrary, high selectivity wet etching can avoid the over etching on the underlying material. Therefore, the wet etching method can improve the uniform of the wafer to provide the better infrared image quality than the dry etching. Experiment results show that the average noise equivalent different temperature (NEDT) of wet etching method is 39.28mK, that value is better than 524.67mK by the dry etching method.
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