fabrication of gallium oxide nano-dots for resistive random access memory (RRAM) using atomic force microscopy local anodic oxidation
碩士 === 大同大學 === 光電工程研究所 === 100 === Recently , the resistive random access memory (RRAM) has been extensively investigated . The main structure from the Metal-Insulator- Metal (MIM) stacking, with the low process temperature makes the RRAMs integrated to the conventional IC process practically. In a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70718890690496649327 |