| Summary: | 碩士 === 國立臺北科技大學 === 機電整合研究所 === 100 === For the recent development of Semiconductor process, the base substrate in general is the silicon. Although the silicon process is quite mature in Taiwan but the high frequency parasitic effects and reflection phenomenon of silicon still needs to be improved. In order to improve the characteristics of silicon structure, we change the substrate to glass because it has significant high frequency transmission characteristics. In the future, with Through Glass Via (TGV) technology, the probe on the front side of the glass substrate can be connected to the transmission line on the back, and further facilitate the connection to the other electronic devices.
The probe fabricated by MEMS technology has some functional limitations such as low probe contact force, complex production process and very large transmission loss when operate at high frequency. In other words, the main issue of MEMS probe card is that each probe can’t bear or generate enough forces to puncture the metal oxide layer and operating at the high frequency environment. In this research, we fabricated MEMS probe to apply for high frequency transmission. First we used the simulation software Ansoft HFSS/Ansys Workbench to simulate the probe in terms of S-parameter S11> -20dB, S12 > -1dB, structure stress, shear force and deflection. After finishing the structural simulation, we started to manufacture the probe cavity and electro-formed nickel. The purpose is to increase thickness of Probe cantilever to enhance its strength and used the polishing process to make the thickness of the probe uniform. After polishing the wafer, we used the Lift off technology to separate probe from cavity. Finally, we coat the gold around the probe in order to reduce the skin effect.
The probe structure design for the GSG type requires four masks aligned with each other under conditions as following: width of the S-end is 50μm, the end of the G width is progressive from 400μm reduced to 50μm, probe pitch is 150μm, and the length of the probe is 1900μm.
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