Effects of Different Annealing Temperatures and Nitrogen Concentrations on PBTI and NBTI Reliability of HfO2 NMOSFETs
碩士 === 國立臺北科技大學 === 機電整合研究所 === 100 === In the new generation of MOSFETs, using HfO2 high-k materials as gate dielectric is unavoidable. Recently, the incorporation of nitrogen (N) in HfO2 gate dielectrics has widely utilized as a result of increasing thermal stability, decreasing equivalent oxide t...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/u8keyd |