Using Power Transform to Study the DC and AC Lifetimes of High Temperature Hot-Carrier Effect on MOSFETs of 45 nm Node and Beyond
碩士 === 國立臺北科技大學 === 機電整合研究所 === 100 === MOSFETs use HfO2 as the gate dielectrics in the new generation, but they still have hot-carrier problem, and more studies are need. Our team invented the Power Transform Model to study hot-carrier reliability of 65 nm MOSFETs in the past, and the results o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ed2568 |