Reliability test of high voltage SOI device under Hot carrier injection stress
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 100 === The Hot-carrier-induced on-resistance degradations of Locos PLDMOS and Tapered PLDMOS transistors are investigated in detail by MEDICI, a TCAD simulation and charge pumping test. For different stress conditions, degradation behaviors of PLDMOS transistors are an...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/60749395705720697161 |