An Investigation of Breakdown Roll-off and ESD on Multi-Finger PNP BJT Device with Different Base Width and Monte Carlo Simulation
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 100 === Lateral PNP bipolar junction transistors (BJTs) fabricated using a bulk 0.25 µm CMOS technology are presented. This lateral PNP device has good ESD protection as we demonstrated that in this work. It is found that a lateral PNP device can exhibit snapback behavi...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26193349925668587526 |