Study on the low electrical resistivity metal oxide thin films

• Main Authors: Huang, Zhangyan, 黃章彥
• Other Authors: Tsau,Chunhuei
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/r779v7

碩士 === 中國文化大學 === 化學工程與材料工程學系奈米材料碩士班 === 100 === We use the AlFeCoNi、CrFeCoNi、TiCo1.5Ni1.5 alloy target deposited the thin films in this paper. Then, some of the thin films were vacuum annealed at high temperature for investigating the effects of annealing conditions on their electrical resistivity. The annealing temperatures were from 500℃ to 1000℃. The microstructure of the thin films were analyzed by X-ray diffraction, scanning electron microscopy and transmission electron microscopy；their resistivities were measured by four-point probe. The results indicated that the as-deposited thin film had an amorphous structure. All of these films would transform to FCC structure after vacuum annealed at high temperatures. Results indicated the lowest resistivity of the alloy oxide thin film was the AlFeCoNi oxide thin film, and its resistivity was 15μΩ-cm after annealed at 800°C for 30min. This value is not only lower than ITO (150μΩ-cm) and RuO2 single crystal (35μΩ-cm), but also lower than our previous studies on the TixFeCoNi oxide thin films. Moreover, AlFeCoNi oxide films had good thermal stability, because its resistivity did not change significantly after annealed for 4 hours.