The Fabrication of Porous Silicon Lateral Sensors and The Study of Plasma Enhancement

• Main Authors: Lin, Chu-Wei, 林矗蔚
• Other Authors: Lin, Jia-Chiuan
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/65232185142766381756

碩士 === 中國文化大學 === 化學工程與材料工程學系奈米材料碩士班 === 101 === In this study‚ silicon is used for the electrochemical etching to produce porous silicon structure. The porous silicon sample is measured by UV, PL, SEM and I-V. The membrane material has the characteristics of high-surface area ratio, high impedance, high thermal insulation, and with a high dielectric coefficient. These characteristics can be significantly improve the quality and stability of Si-based systems in optical-electronic industry. Meanwhile such a membrane can be used these for the liquid and the gas sensing. In the study, the sample back surface plated with copper is used to increase the conductivity. The gold plating is used on the front multi-finger to increase the accuracy and sensitivity. Finally microwave plasma etching is adopted to enhance the sensitivity. The results show,the high surface of porous silicon can provide a high sensitivity in the Si-based sensing systems.