Charge Trapping Characteristics of Metal-Oxide-Semiconductor Structured Nonvolatile Memory Devices with Various Ti-Doped HfLaTiO Dielectrics and Post-Deposition Annealing
碩士 === 國立虎尾科技大學 === 資訊工程研究所 === 100 === In this thesis, various Ti-doped HfLaTiO dielectrics as the charge trapping layers of metal-oxide-semiconductor (MOS) structured nonvolatile memory (NVM) devices were proposed. The first topic considers the effects of the different post-depostition annealing (...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d7mwya |