Preparation and Thermal Stability of the Cu3Ge film on Si Substrate by Reactive Magnetron Co-sputtering Using Copper and Germanium Metallic Targets
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 100 === The copper-gemanide (Cu3Ge) formation process is enabled by magnetron co-sputter deposition process at room temperature. Whoever, follow annealed in an nitrogen atmosphere, the resistivity can be as low as 12 μΩcm, at 600℃ for 20 min, by the way on the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8yzpcw |