Surface passivation of silicon heterojunction using hydrogenated amorphous silicon oxide layers
碩士 === 國立臺灣科技大學 === 化學工程系 === 100 === In this paper, we studied the passivation quality of intrinsic amorphous silicon sub-oxides (a-SiOx:H) thin layers deposited on n-type FZ Si wafers. Conventional RF plasma enhanced chemical vapor deposition (RF-PECVD) system were applied to deposit a-SiOx:H usin...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/p2kxf5 |