Material Properties of GaAsPSb
碩士 === 國立臺灣大學 === 電子工程學研究所 === 100 === In this thesis, we use secondary ion mass spectroscopy to acquire mole fractions of our samples; Using high resolution X-ray diffraction to do the reciprocal space mapping, and obtain the information about lattice structure; Using Extended X-ray absorption fine...
Main Authors: | Han-Sheng Tsai, 蔡漢聲 |
---|---|
Other Authors: | 林浩雄 |
Format: | Others |
Language: | zh-TW |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/99097800891086977924 |
Similar Items
-
Structural Properties of GaPSb and GaAsPSb
by: Cheng-Ying Tsai, et al.
Published: (2014) -
GaAsPSb and InGaPSb Alloys : Properties and Applications to Heterojunction Bipolar Transistors
by: Yu-Chung Chin, et al.
Published: (2013) -
Optical characterization of a novel quaternary compound GaAsPSb and InGaP/GaAsPSb/GaAs NpN double heterojunction bipolar transistor structure
by: Jyun-Yi Chen, et al.
Published: (2013) -
Optical and electrical properties of InAsPSb bulk epilayers grown on GaAs substrates
by: Yu-Chieh Chou, et al.
Published: (2009) -
Raman and IR reflection spectroscopies of InAsPSb and InPSb
by: Jian-Shum Tzeng, et al.
Published: (2010)