Nitrogen Doped Zinc Oxide Thin Film Transistor fabricated by Plasma Enhanced Atomic Layer Deposition
碩士 === 國立臺灣大學 === 電子工程學研究所 === 100 === Zinc oxide (ZnO) thin film is a promising transparent oxide to replace amorphous silicon used in thin film transistor (TFT), but the ZnO thin film deposited by atomic layer deposition (ALD) has high electron concentration (1019~1020 cm-3). Thin film transistor...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44414277748797222527 |