Fabrication and Characterization of Ga2O3/GaN single Nanowire Metal-Oxide-Semiconductor Field-effect Transistors
博士 === 國立臺灣大學 === 光電工程學研究所 === 100 === This research aims to provide experimental solutions to resolve a long-standing issue, i.e., short channel effect, which hinders scaling-down of nano-electronics at gate length below 50nm. Taking advantage of our recent development of (i) horizontal and selecti...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63030947773368356469 |