Study on InGaN/GaN Quantum Well Structures on Si Substrate with Transmission Electron Microscopy
碩士 === 國立臺灣大學 === 光電工程學研究所 === 100 === The difference of thermal expansion coefficient between GaN and Si results in a strong tensile stress on the GaN epitaxial layer during the cooling process. In our study, we create a compressive thermal stress by using an AlN buffer layer grown with graded tem...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25988065222972125041 |