The characteristics analysis of MOS capacitor with Zr-incorporated Y2O3 stack high-K dielectric layer
碩士 === 國立臺灣師範大學 === 機電科技研究所 === 100 === As the dimension of metal-oxide-semiconductor field effect transistor (MOSFET) devices continues to scale down, the gate leakage current increases accordingly because the traditional gate oxide gradually approaches its physical limit. Therefore, high-K materia...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/30677937606851524023 |