The Design and Simulation of a High Performance ESD Protection Device Using the Gate-Grounded NMOSFET Structure
碩士 === 國立臺南大學 === 電機工程學系碩士班 === 100 === A Gate-Grounded N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (GGNMOSFET) structure is presented to provide the effective ESD protection. By implementing Shallow Trench Isolation (STI) and N+ buried layer (NBL) into the GGNMOSFET, the snapback ef...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23386675366703949795 |