Influence of Ion Implantation on Phase-Change Behaviors of Sb Films
碩士 === 國立清華大學 === 工程與系統科學系 === 100 === This study investigates the ion-implantation doping behavior of phase change memory materials. First, we discuss the phase-change characteristics of the Ge2Sb2Te5 films subjected to N+ or O+-implantation. Secondly, we study the phase-change characteristics of t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00321023295804148497 |