Study On Resistive Switching Mechanism Of Hafnium-doped Silicon Oxide Thin Film
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 100 === In this study,The bottom electrode(TiN),middle insulator(Hf:SiOx),and top electrode(Pt) were deposited respectively by sputtering technique for fabricating the RRAM with MIM structure.The mole fraction of hafnium were about 5%.Instead of non-doped SiO2 base...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31271252108596377010 |