Study on fabrication and characteristics of Zr-doped SiO2 thin film resistance random access memory
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 100 === With the progress of technology, large capacity and scalable are required for the future. Recent years, the physical limit is approached and a next-generation memory is needed in the future. In addition, non- volatile memory occupies more than 96% in...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00984147015170388301 |