The effect of growth temperature and doping for quantum dots-in-a-well laser
碩士 === 國立中山大學 === 光電工程學系研究所 === 100 === The purpose of this thesis is to fabricate 12-layer InxGa1-xAs quantum dots grown on 2-nm In0.1Ga0.9As quantum wells (DWell) laser structures grown by molecular-beam epitaxy (MBE) on GaAs substrats. We expect to optimum the lasers performance by tune the epita...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47368220717402007434 |