Study of intermediate carbon layer between the insulated layer and electrodes of resistive random access memory device
碩士 === 國立屏東教育大學 === 應用物理系 === 100 === Resistive random access memory (RRAM) has been considered as a potential memory device for next generation electronics. One of the problems of RRAM is the choice of electrode material. The Pt electrode has usually been chosen as a bottom electrode of RRAM. Pt is...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01906992370556583616 |