| Summary: | 碩士 === 國立東華大學 === 電機工程學系 === 100 === Many miniature scale device issues come out in recent years because of the scaling down of the devices. We simulated Semiconductor-On-Insulation MOSFET(SOI MOSFET) with the software TCAD for the cost saving study. The simulated device structure is 20nm N-type SOI-triple-gate which is for the device effect studying under gate leakage current. It simulated these two effect models of direct tunneling and Fowler–Nordheim tunneling to study the change of leakage current under different physical parameters. We compared its gate leakage current under different channel width, and observe the effect on leakage current by doping concentration in device channel. In addition, we change the channel shape to suppress the gate leakage current. The simulation revealed the device current is much greater than Fowler–Nordheim tunneling model under direct tunneling model, leakage current will be affected by different physical parameters, current density will be increased by reduced channel width, leakage current will be increased by increasing doping concentration in device channel, and leakage current can be effectively reduced by changing its channel shape.
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